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IXTH12N100, IXTH10N100 Datasheet - IXYS Corporation

IXTH12N100 MOSFET

www.DataSheet4U.com MegaMOSTMFET IXTH / IXTM 10N100 IXTH / IXTM 12N100 VDSS 1000 V 1000 V ID25 10 A 12 A RDS(on) 1.20 Ω 1.05 Ω N-Channel Enhancement Mode Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM T stg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C 10N100 12N100 10N100 12N100 Maximum Ratings 1000 1000 ±20 ±30 10 12 40 48 300 -55 +150 150 -55 +150 V V V V A A A A W °C °C °C TO.

IXTH12N100 Features

* l l l l Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s l International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times Symbol Test Conditions

IXTH10N100_IXYSCorporation.pdf

This datasheet PDF includes multiple part numbers: IXTH12N100, IXTH10N100. Please refer to the document for exact specifications by model.
IXTH12N100 Datasheet Preview Page 2 IXTH12N100 Datasheet Preview Page 3

Datasheet Details

Part number:

IXTH12N100, IXTH10N100

Manufacturer:

IXYS Corporation

File Size:

135.23 KB

Description:

Mosfet.

Note:

This datasheet PDF includes multiple part numbers: IXTH12N100, IXTH10N100.
Please refer to the document for exact specifications by model.

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TAGS

IXTH12N100 IXTH10N100 MOSFET IXYS Corporation

IXTH12N100 Distributor