Datasheet Details
- Part number
- IXTH12N120
- Manufacturer
- IXYS
- File Size
- 541.56 KB
- Datasheet
- IXTH12N120-IXYS.pdf
- Description
- Power MOSFET
IXTH12N120 Description
Power MOSFET, Avalanche Rated High Voltage Preliminary Data Sheet IXTH 12N120 VDSS = 1200 V ID (cont) = 12 A RDS(on)= 1.4 Ω Symbol Test Conditio.
IXTH12N120 Features
* z International standard package JEDEC TO-247 AD
z Low RDS (on) HDMOSTM process z Rugged polysilicon gate cell structure z Fast switching times
Symbol
VDSS VGS(th) IGSS IDSS
RDS(on)
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified)
min. typ. max. VGS = 0 V, ID = 1 mA
IXTH12N120 Applications
* z Switch-mode and resonant-mode power supplies
z Motor controls z Uninterruptible Power Supplies (UPS) z DC choppers
Advantages
z Easy to mount with 1 screw (isolated mounting screw hole)
z Space savings z High power density
© 2004 IXYS All rights reserved
DS98937E(04/04)
IXTH 12N120
Symbol
gfs
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