IXTH12N120 Power MOSFET

IXYS

Description

Power MOSFET, Avalanche Rated High Voltage Preliminary Data Sheet IXTH 12N120 VDSS = 1200 V ID (cont) = 12 A RDS(on)= 1.4 Ω Symbol Test Conditio.

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Datasheet Specifications

Part number: IXTH12N120
Manufacturer: IXYS
File Size: 541.56 KB
Datasheet: IXTH12N120-IXYS.pdf
Description: Power MOSFET

Features

* z International standard package JEDEC TO-247 AD z Low RDS (on) HDMOSTM process z Rugged polysilicon gate cell structure z Fast switching times Symbol VDSS VGS(th) IGSS IDSS RDS(on) Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VGS = 0 V, ID = 1 mA

Applications

* z Switch-mode and resonant-mode power supplies z Motor controls z Uninterruptible Power Supplies (UPS) z DC choppers Advantages z Easy to mount with 1 screw (isolated mounting screw hole) z Space savings z High power density © 2004 IXYS All rights reserved DS98937E(04/04) IXTH 12N120 Symbol gfs

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IXTH12N120 Power MOSFET IXYS

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