IXTH12N120 Datasheet - IXYS

IXTH12N120 Power MOSFET

Power MOSFET, Avalanche Rated High Voltage Preliminary Data Sheet IXTH 12N120 VDSS = 1200 V ID (cont) = 12 A RDS(on)= 1.4 Ω Symbol Test Conditions VDSS VDGR VGS VGSM ID25 IDM IAR EEAARS PD TJ TJM Tstg Md Weight TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TTCC = 25°C = 25°C TC = 25°C Mounting torque Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Ratings 1200 1200 V V ±.

IXTH12N120 Features

* z International standard package JEDEC TO-247 AD z Low RDS (on) HDMOSTM process z Rugged polysilicon gate cell structure z Fast switching times Symbol VDSS VGS(th) IGSS IDSS RDS(on) Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VGS = 0 V, ID = 1 mA

IXTH12N120 Datasheet (541.56 KB)