IXTH12N120 Datasheet - IXYS

IXTH12N120, Power MOSFET

Power MOSFET, Avalanche Rated High Voltage Preliminary Data Sheet IXTH 12N120 VDSS = 1200 V ID (cont) = 12 A RDS(on)= 1.4 Ω Symbol Test Conditio.

datasheet Preview Page 1 from Datasheet4u.com

IXTH12N120-IXYS.pdf

IXTH12N120 Datasheet Preview — Preview of IXTH12N120 PDF

Datasheet Details

Part number:

IXTH12N120

Manufacturer:

IXYS

File Size:

541.56 KB

Description:

Power MOSFET

Features

* z International standard package JEDEC TO-247 AD z Low RDS (on) HDMOSTM process z Rugged polysilicon gate cell structure z Fast switching times Symbol VDSS VGS(th) IGSS IDSS RDS(on) Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VGS = 0 V, ID = 1 mA

Applications

* z Switch-mode and resonant-mode power supplies z Motor controls z Uninterruptible Power Supplies (UPS) z DC choppers Advantages z Easy to mount with 1 screw (isolated mounting screw hole) z Space savings z High power density © 2004 IXYS All rights reserved DS98937E(04/04) IXTH 12N120 Symbol gfs

IXTH12N120 Distributors

📁 Related Datasheet

IXTH12N100 IXTH12N90 IXTH102N15T IXTH102N20T IXTH10N100 IXTH10P50

📌 All Tags

IXTH12N120 Power MOSFET IXYS

IXYS IXTH12N120-like datasheet