IXTH12N120 Datasheet - IXYS

IXTH12N120 - Power MOSFET

Power MOSFET, Avalanche Rated High Voltage Preliminary Data Sheet IXTH 12N120 VDSS = 1200 V ID (cont) = 12 A RDS(on)= 1.4 Ω Symbol Test Conditions VDSS VDGR VGS VGSM ID25 IDM IAR EEAARS PD TJ TJM Tstg Md Weight TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TTCC = 25°C = 25°C TC = 25°C Mounting torque Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Ratings 1200 1200 V V ±

IXTH12N120 Features

* z International standard package JEDEC TO-247 AD z Low RDS (on) HDMOSTM process z Rugged polysilicon gate cell structure z Fast switching times Symbol VDSS VGS(th) IGSS IDSS RDS(on) Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VGS = 0 V, ID = 1 mA

IXTH12N120-IXYS.pdf

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Datasheet Details

Part number:

IXTH12N120

Manufacturer:

IXYS

File Size:

541.56 KB

Description:

Power mosfet.

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IXTH12N120 Power MOSFET IXYS