IXTH110N10L2 - N-Channel MOSFET
IXTH110N10L2 Features
* Static drain-source on-resistance: RDS(on) ≤ 18mΩ@VGS=10V
* Fully characterized avalanche voltage and current
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* APPLICATION
* DC/DC Converter
* Switch-Mode and Resonan
