IXTH10P50P, IXTA10P50P Datasheet - IXYS

IXTH10P50P - Power MOSFET

PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTA10P50P IXTP10P50P IXTQ10P50P IXTH10P50P TO-263 AA (IXTA) TO-220AB (IXTP) VDSS = ID25 =  RDS(on) - 500V - 10A 1 TO-3P (IXTQ) G S D (Tab) G DS D (Tab) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings - 500 V - 500 V 20 V 30 V TC = 25C TC = 25C, Pulse Width Limited by TJ

IXTH10P50P Features

* International Standard Packages

* Avalanche Rated

* Rugged PolarPTM Process

* Low Package Inductance

* Fast Intrinsic Diode Advantages

* Easy to Mount

* Space Savings

* High Power Density Applications

* High-Side Switches

* Push Pull Amplifiers

* DC Chop