IXTH11N80
IXYS
64.72kb
Megamos fet.
TAGS
📁 Related Datasheet
IXTH11N80 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
FEATURES ·Drain Current ID= 11A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 800V(Min) ·Static Drain-Source On-Resistance
:.
IXTH110N10L2 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 18mΩ@VGS=10V ·Fully characterized avalanche voltage and curre.
IXTH110N10L2 - Power MOSFET
(IXYS)
Advance Technical Information
LinearL2TM Power MOSFET w/ Extended FBSOA
IXTH110N10L2 IXTT110N10L2
VDSS = 100V
ID25 = 110A ≤ RDS(on) 18mΩ
N-Channel.
IXTH11P50 - P-Channel MOSFET
(IXYS Corporation)
Power MOSFETs
P-Channel Enhancement Mode Avalanche Rated
IXTH11P50 IXTT11P50
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
PD
TJ TJM Tstg
TL Tsold
Md
W.
IXTH102N15T - Power MOSFET
(IXYS)
Trench Gate Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated
IXTA102N15T IXTH102N15T IXTP102N15T IXTQ102N15T
TO-263 (IXTA)
TO-247 (IXTH)
T.
IXTH102N15T - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 18mΩ@VGS=10V ·Fully characterized avalanche voltage and curre.
IXTH102N20T - Power MOSFET
(IXYS)
Preliminary Technical Information
TrenchHVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTH102N20T IXTQ102N20T IXTV102N20T
VDSS = ID2.
IXTH102N20T - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 200V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 23mΩ(Max) ·Fast Swi.
IXTH10N100 - MOSFET
(IXYS Corporation)
..
MegaMOSTMFET
IXTH / IXTM 10N100 IXTH / IXTM 12N100
VDSS 1000 V 1000 V
ID25 10 A 12 A
RDS(on) 1.20 Ω 1.05 Ω
N-Channel Enhancem.
IXTH10N100D2 - Depletion Mode MOSFET
(IXYS)
Depletion Mode MOSFET
N-Channel
Preliminary Technical Information
IXTH10N100D2 IXTT10N100D2
VDSX = ID(on) >
RDS(on)
D
1000V 10A
1.5
G S
TO-2.
