* q International standard packages q Low R HDMOSTM process DS (on) q Rugged polysilicon gate cell structure q Low package inductance (< 5 nH) - easy to drive and to protect q Fast switching times Symbol V DSS VGS(th) IGSS IDSS R DS(on) Test Conditions Characteristic Values (T J = 25°C,
IXTH11N80 Datasheet (64.72 KB)
IXTH11N80
IXYS
64.72 KB
Megamos fet.
MegaMOSTMFET
N-Channel Enhancement Mode
VDSS
IXTH / IXTM 11N80 800 V IXTH / IXTM 13N80 800 V
ID25
11 A 13 A
RDS(on)
0.95 Ω 0.80 Ω
Symbol
Test Con.
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