IXTH11N80 Datasheet - IXYS

IXTH11N80, MegaMOS FET

MegaMOSTMFET N-Channel Enhancement Mode VDSS IXTH / IXTM 11N80 800 V IXTH / IXTM 13N80 800 V ID25 11 A 13 A RDS(on) 0.95 Ω 0.80 Ω Symbol Test Con.

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IXTH11N80-IXYS.pdf

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Datasheet Details

Part number:

IXTH11N80

Manufacturer:

IXYS

File Size:

64.72 KB

Description:

MegaMOS FET

Features

* q International standard packages q Low R HDMOSTM process DS (on) q Rugged polysilicon gate cell structure q Low package inductance (< 5 nH) - easy to drive and to protect q Fast switching times Symbol V DSS VGS(th) IGSS IDSS R DS(on) Test Conditions Characteristic Values (T J = 25°C,

Applications

* q Switch-mode and resonant-mode power supplies q Motor controls q Uninterruptible Power Supplies (UPS) q DC choppers Advantages q Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) q Space savings q High power density IXYS reserves the right to change limits, test conditions, and di

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IXTH11N80 MegaMOS FET IXYS

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