IXTH11N80 Datasheet - IXYS

IXTH11N80 MegaMOS FET

MegaMOSTMFET N-Channel Enhancement Mode VDSS IXTH / IXTM 11N80 800 V IXTH / IXTM 13N80 800 V ID25 11 A 13 A RDS(on) 0.95 Ω 0.80 Ω Symbol Test Conditions Maximum Ratings VDSS VDGR VGS VGSM I D25 IDM TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient T C = 25°C TC = 25°C, pulse width limited by TJM 11N80 13N80 11N80 13N80 800 V 800 V ±20 V ±30 V 11 A 13 A 44 A 52 A PD TJ TJM Tstg Md Weight TC = 25°C Mounting torque 300 W -55 +150 150 -55 +150 °C °C °C 1.13/.

IXTH11N80 Features

* q International standard packages q Low R HDMOSTM process DS (on) q Rugged polysilicon gate cell structure q Low package inductance (< 5 nH) - easy to drive and to protect q Fast switching times Symbol V DSS VGS(th) IGSS IDSS R DS(on) Test Conditions Characteristic Values (T J = 25°C,

IXTH11N80-IXYS.pdf