IXTH12N90
INCHANGE
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N-channel mosfet. *Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETE
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📁 Related Datasheet
IXTH12N100 - MOSFET
(IXYS Corporation)
..
MegaMOSTMFET
IXTH / IXTM 10N100 IXTH / IXTM 12N100
VDSS 1000 V 1000 V
ID25 10 A 12 A
RDS(on) 1.20 Ω 1.05 Ω
N-Channel Enhancem.
IXTH12N100L - Power MOSFET
(IXYS)
LinearTM Power MOSFET w/ Extended FBSOA
N-Channel Enhancement Mode Avalanche Rated
IXTH12N100L
VDSS = ID25 = ≤ RDS(on)
1000V 12A 1.3Ω
Symbol VDSS .
IXTH12N120 - Power MOSFET
(IXYS)
Power MOSFET, Avalanche Rated High Voltage
Preliminary Data Sheet
IXTH 12N120
VDSS = 1200 V
ID (cont) = 12 A
RDS(on)=
1.4 Ω
Symbol Test Conditio.
IXTH12N140 - Power MOSFET
(IXYS)
Advance Technical Information
High Voltage Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXTT12N140 IXTH12N140
VDSS.
IXTH12N150 - High Voltage Power MOSFET
(IXYS)
High Voltage Power MOSFET
IXTT12N150 IXTH12N150
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM.
IXTH12N65X2 - Power MOSFET
(IXYS)
Preliminary Technical Information
X2-Class Power MOSFET
N-Channel Enhancement Mode
IXTA12N65X2 IXTP12N65X2 IXTH12N65X2
VDSS = ID25 = RDS(on)
650V.
IXTH12N65X2 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 650V(Min) ·Static drain-source on-resistance:
RDS(on) ≤ 300mΩ@VGS=10V ·Fully.
IXTH12N70X2 - Power MOSFET
(IXYS)
Preliminary Technical Information
X2-Class Power MOSFET
N-Channel Enhancement Mode
IXTA12N70X2 IXTP12N70X2 IXTH12N70X2
VDSS =
ID25 = RDS(on)
700.
IXTH12N70X2 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS ≥ 700V ·Static Drain-Source On-Resistance
: RDS(on) ≤ 300mΩ@VGS= 10V ·Fast Sw.
IXTH102N15T - Power MOSFET
(IXYS)
Trench Gate Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated
IXTA102N15T IXTH102N15T IXTP102N15T IXTQ102N15T
TO-263 (IXTA)
TO-247 (IXTH)
T.
