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IXTH102N15T Datasheet - IXYS

IXTH102N15T Power MOSFET

Trench Gate Power MOSFETs N-Channel Enhancement Mode Avalanche Rated IXTA102N15T IXTH102N15T IXTP102N15T IXTQ102N15T TO-263 (IXTA) TO-247 (IXTH) TO-220 (IXTP) VDSS = ID25 = RDS(on) ≤ 150V 102A 18mΩ TO-3P (IXTQ) G S (TAB) GD S (TAB) G DS (TAB) G D S (TAB) Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C RGS = 1MΩ Continuous Transient Maximum Ratings 150 V 150 V ± 20 V ± 30 V .

IXTH102N15T Features

* z International Standard Packages z Avalanche Rated Advantages z Easy to Mount z Space Savings z High Power Density Applications z DC-DC Converters z Battery Chargers z Switched-Mode and Resonant-Mode Power Supplies z DC Choppers z AC Motor Drives z Uninterruptible Power Supplies z High Speed Power

IXTH102N15T Datasheet (234.88 KB)