* z z z z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. -500 0.054 -3.0 -0.122 ± 100 TJ = 25 ° C TJ = 125 ° C -200 -1 -5.0 V %/K V %/K nA µA mA z International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structu
IXTH10P50 Datasheet (123.06 KB)
IXTH10P50
IXYS Corporation
123.06 KB
P-channel mosfet.
Standard Power MOSFET
P-Channel Enhancement Mode Avalanche Rated
VDSS
ID25
RDS(on)
IXTH/IXTT 10P50 IXTH/IXTT 11P50
-500 V -10 A 0.90 Ω -500 V -11.
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