IXTH14N100 MegaMOSTMFET

IXYS Corporation

Description

IXTH 14N100 VDSS MegaMOSTMFET N-Channel Enhancement Mode ID25 RDS(on) = 1000 V = 14 A = 0.82 Ω Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM T stg M.

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Datasheet Specifications

Part number: IXTH14N100
Manufacturer: IXYS Corporation
File Size: 46.57 KB
Datasheet: IXTH14N100_IXYSCorporation.pdf
Description: MegaMOSTMFET

Features

* l Maximum lead temperature for soldering 1.6 mm (0.062 in. ) from case for 10 s l l l International standard package JEDEC TO-247 AD Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Fast switching times Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise

Applications

* l l VDSS VGS(th) IGSS IDSS R DS(on) VGS = 0 V, ID = 3 mA VDS = VGS, ID = 250 µA VGS = ±20 VDC, VDS = 0 VDS = 0.8
* VDSS VGS = 0 V l l Switch-mode and resonant-mode power supplies Motor controls Uninterruptible Power Supplies (UPS) DC choppers Advantages l VGS = 10 V, ID = 0.5

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IXTH14N100 MegaMOSTMFET IXYS Corporation

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