IXTH14N80 Datasheet, Mfet, IXYS

IXTH14N80 Features

• Mfet l International standard package l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Low package inductance (< 5 nH) - easy to drive and to protect l Fast switchin

PDF File Details

Part number:

IXTH14N80

Manufacturer:

IXYS

File Size:

80.38kb

Download:

📄 Datasheet

Description:

Megamos mfet.

IXTH14N80 Application

• Applications l Switch-mode and resonant-mode power supplies l Motor control l Uninterruptible Power Supplies (UPS) l DC choppers Advantages l Easy t

TAGS

IXTH14N80

IXYS

📁 Related Datasheet

IXTH14N80 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor FEATURES ·Drain Current ID= 14A@ TC=25℃ ·Drain Source Voltage- : VDSS= 800V(Min) ·Static Drain-Source On-Resistance :.

IXTH14N100 - MegaMOSTMFET (IXYS Corporation)
IXTH 14N100 VDSS MegaMOSTMFET N-Channel Enhancement Mode ID25 RDS(on) = 1000 V = 14 A = 0.82 Ω Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM T stg M.

IXTH140N075L2 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 11mΩ@VGS=10V ·Fully characterized avalanche voltage and curre.

IXTH140N075L2 - Power MOSFET (IXYS)
Preliminary Technical Information LinearL2TM Power MOSFET w/Extended FBSOA N-Channel Enhancement Mode Avalanche Rated IXTT140N075L2HV IXTH140N075L2 .

IXTH140P05T - Power MOSFET (IXYS)
TrenchPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated IXTA140P05T IXTP140P05T IXTH140P05T VDSS ID25 RDS(on) = = ≤ - 50V - 140A 9mΩ .

IXTH102N15T - Power MOSFET (IXYS)
Trench Gate Power MOSFETs N-Channel Enhancement Mode Avalanche Rated IXTA102N15T IXTH102N15T IXTP102N15T IXTQ102N15T TO-263 (IXTA) TO-247 (IXTH) T.

IXTH102N15T - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 18mΩ@VGS=10V ·Fully characterized avalanche voltage and curre.

IXTH102N20T - Power MOSFET (IXYS)
Preliminary Technical Information TrenchHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH102N20T IXTQ102N20T IXTV102N20T VDSS = ID2.

IXTH102N20T - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 23mΩ(Max) ·Fast Swi.

IXTH10N100 - MOSFET (IXYS Corporation)
.. MegaMOSTMFET IXTH / IXTM 10N100 IXTH / IXTM 12N100 VDSS 1000 V 1000 V ID25 10 A 12 A RDS(on) 1.20 Ω 1.05 Ω N-Channel Enhancem.