* l International standard package l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Low package inductance (< 5 nH) - easy to drive and to protect l Fast switching times Symbol VDSS V GS(th) I GSS IDSS R DS(on) Test Conditions Characteristic Values (TJ = 25°C, unless otherw
IXTH14N80 Datasheet (80.38 KB)
IXTH14N80
IXYS
80.38 KB
Megamos mfet.
MegaMOSTMFET
N-Channel Enhancement Mode
IXTH 14N80
VDSS = 800 V
ID25 = 14 A RDS(on) = 0.70 Ω
Symbol
Test Conditions
VDSS V
DGR
VGS VGSM
ID25 IDM
.
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