IXTH14N80 Datasheet - IXYS

IXTH14N80 MegaMOS MFET

MegaMOSTMFET N-Channel Enhancement Mode IXTH 14N80 VDSS = 800 V ID25 = 14 A RDS(on) = 0.70 Ω Symbol Test Conditions VDSS V DGR VGS VGSM ID25 IDM PD TJ TJM Tstg TJ = 25°C to 150°C T J = 25°C to 150°C; R GS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C Max. lead temperature for soldering 300 1.6 mm (0.063 in) from case for 10 s Md Weight Mounting torque Maximum Ratings 800 800 ±20 ±30 14 56 300 -55 +150 150 -55 +150 V V V V A A W °C.

IXTH14N80 Features

* l International standard package l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Low package inductance (< 5 nH) - easy to drive and to protect l Fast switching times Symbol VDSS V GS(th) I GSS IDSS R DS(on) Test Conditions Characteristic Values (TJ = 25°C, unless otherw

IXTH14N80 Datasheet (80.38 KB)