Datasheet Specifications
- Part number
- IXTH14N80
- Manufacturer
- IXYS
- File Size
- 80.38 KB
- Datasheet
- IXTH14N80-IXYS.pdf
- Description
- MegaMOS MFET
Description
MegaMOSTMFET N-Channel Enhancement Mode IXTH 14N80 VDSS = 800 V ID25 = 14 A RDS(on) = 0.70 Ω Symbol Test Conditions VDSS V DGR VGS VGSM ID25 IDM .
Features
* l International standard package l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Low package inductance (< 5 nH) - easy to drive and to protect l Fast switching times Symbol VDSS V GS(th) I GSS IDSS R DS(on) Test Conditions Characteristic Values (TJ = 25°C, unless otherwApplications
* l Switch-mode and resonant-mode power supplies l Motor control l Uninterruptible Power Supplies (UPS) l DC choppers Advantages l Easy to mount with 1 screw (isolated mounting screw hole) l Space savings l High power density IXYS reserves the right to change limits, test conditions, and dimensions. .IXTH14N80 Distributors
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