IXTH140P05T Datasheet - IXYS

IXTH140P05T Power MOSFET

TrenchPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated IXTA140P05T IXTP140P05T IXTH140P05T VDSS ID25 RDS(on) = = ≤ - 50V - 140A 9mΩ TO-263 AA (IXTA) G S D (Tab) TO-220AB (IXTP) Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-220 & TO-247) TO-263 TO-220 TO-247 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C (Chip Capabi.

IXTH140P05T Features

* International Standard Packages Avalanche Rated z Extended FBSOA z Fast Intrinsic Diode z Low RDS(ON) and QG Advantages Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = - 250μA VDS = VGS, ID = - 250μA VGS = ± 15V, VDS = 0V VDS = VDSS, VGS

IXTH140P05T Datasheet (236.31 KB)