IXTH10P60, IXTT10P60 Datasheet - IXYS

IXTH10P60 - Power MOSFET

Power MOSFETs P-Channel Enhancement Mode Avalanche Rated IXTT10P60 IXTH10P60 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL Tsold Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-247) TO-268 TO-247 Maximum Ratings - 600 V - 600 V ±20 V ±30 V - 10 A - 40 A - 10

IXTH10P60 Features

* z International Standard Packages z Low RDS (on) HDMOSTM Process z Rugged Polysilicon Gate Cell Structure z Avalanche Rated z Low Package Inductance - Easy to Drive and to Protect Advantages z Easy to Mount z Space Savings z High Power Density Applications z High-Side Switching z Push Pull Amplifier

IXTT10P60-IXYS.pdf