IXTH10P60 Datasheet, Mosfet, IXYS

IXTH10P60 Features

  • Mosfet z International Standard Packages z Low RDS (on) HDMOSTM Process z Rugged Polysilicon Gate Cell Structure z Avalanche Rated z Low Package Inductance - Easy to Drive and to Protect Advan

PDF File Details

Part number:

IXTH10P60

Manufacturer:

IXYS

File Size:

122.86kb

Download:

📄 Datasheet

Description:

Power mosfet.

Datasheet Preview: IXTH10P60 📥 Download PDF (122.86kb)
Page 2 of IXTH10P60 Page 3 of IXTH10P60

IXTH10P60 Application

  • Applications z High-Side Switching z Push Pull Amplifiers z DC Choppers z Automatic Test Equipment © 2013 IXYS CORPORATION, All Rights Reserved DS

TAGS

IXTH10P60
Power
MOSFET
IXYS

📁 Related Datasheet

IXTH10P50 - P-Channel MOSFET (IXYS Corporation)
Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated VDSS ID25 RDS(on) IXTH/IXTT 10P50 IXTH/IXTT 11P50 -500 V -10 A 0.90 Ω -500 V -11.

IXTH10P50P - Power MOSFET (IXYS)
PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTA10P50P IXTP10P50P IXTQ10P50P IXTH10P50P TO-263 AA (IXTA) TO-220AB (IXTP) VDSS.

IXTH102N15T - Power MOSFET (IXYS)
Trench Gate Power MOSFETs N-Channel Enhancement Mode Avalanche Rated IXTA102N15T IXTH102N15T IXTP102N15T IXTQ102N15T TO-263 (IXTA) TO-247 (IXTH) T.

IXTH102N15T - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 18mΩ@VGS=10V ·Fully characterized avalanche voltage and curre.

IXTH102N20T - Power MOSFET (IXYS)
Preliminary Technical Information TrenchHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH102N20T IXTQ102N20T IXTV102N20T VDSS = ID2.

IXTH102N20T - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 23mΩ(Max) ·Fast Swi.

IXTH10N100 - MOSFET (IXYS Corporation)
.. MegaMOSTMFET IXTH / IXTM 10N100 IXTH / IXTM 12N100 VDSS 1000 V 1000 V ID25 10 A 12 A RDS(on) 1.20 Ω 1.05 Ω N-Channel Enhancem.

IXTH10N100D2 - Depletion Mode MOSFET (IXYS)
Depletion Mode MOSFET N-Channel Preliminary Technical Information IXTH10N100D2 IXTT10N100D2 VDSX = ID(on) >  RDS(on) D 1000V 10A 1.5 G S TO-2.

IXTH110N10L2 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 18mΩ@VGS=10V ·Fully characterized avalanche voltage and curre.

IXTH110N10L2 - Power MOSFET (IXYS)
Advance Technical Information LinearL2TM Power MOSFET w/ Extended FBSOA IXTH110N10L2 IXTT110N10L2 VDSS = 100V ID25 = 110A ≤ RDS(on) 18mΩ N-Channel.

Stock and price

Littelfuse Inc
MOSFET P-CH 600V 10A TO247
DigiKey
IXTH10P60
242 In Stock
Qty : 510 units
Unit Price : $6.7
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts