* z International Standard Packages z Low RDS (on) HDMOSTM Process z Rugged Polysilicon Gate Cell Structure z Avalanche Rated z Low Package Inductance - Easy to Drive and to Protect Advantages z Easy to Mount z Space Savings z High Power Density Applications z High-Side Switching z Push Pull Amplifier
IXTH10P60 Datasheet (122.86 KB)
IXTH10P60
IXYS
122.86 KB
Power mosfet.
Power MOSFETs
P-Channel Enhancement Mode Avalanche Rated
IXTT10P60 IXTH10P60
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
PD
TJ TJM Tstg
TL Tsold
Md
W.
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