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IXTH12N65X2 N-Channel MOSFET

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Description

isc N-Channel MOSFET Transistor *.

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Datasheet Specifications

Part number
IXTH12N65X2
Manufacturer
INCHANGE
File Size
334.99 KB
Datasheet
IXTH12N65X2-INCHANGE.pdf
Description
N-Channel MOSFET

Features

* Drain Source Voltage- : VDSS= 650V(Min)
* Static drain-source on-resistance: RDS(on) ≤ 300mΩ@VGS=10V
* Fully characterized avalanche voltage and current
* 100% Avalanche Tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

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