2N5433, 2N5494 Datasheet - InterFET

2N5433 N-Channel Silicon Junction Field-Effect Transistor

8/2014 2N5432, 2N5433, 2N5494 N-Channel Silicon Junction Field-Effect Transistor ∙ Low rDS(on) ∙ Excellent Switching ∙ Low Cutoff Current Absolute maximum ratings at TA = 25oC Reverse Gate Source & Gate Drain Voltage -25V Continuous Forward Gate Current 100 mA Continuous Device Power Dissipation 300 mW Power Derating 2.3 mW/oC Storage Temperature Range -65oC to +150oC At 25oC free air temperature Static Electrical Characteristics Gate Source Breakdown Voltage V(BR)GSS Gate Rever.

2N5494-InterFET.pdf

2N5433 Datasheet Preview — This datasheet PDF includes multiple part numbers: 2N5433, 2N5494. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

2N5433, 2N5494

Manufacturer:

InterFET

File Size:

394.57 KB

Description:

N-channel silicon junction field-effect transistor.

Note:

This datasheet PDF includes multiple part numbers: 2N5433, 2N5494.
Please refer to the document for exact specifications by model.

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2N5433 2N5494 N-Channel Silicon Junction Field-Effect Transistor InterFET

2N5433 Distributor