NJ450 Datasheet (InterFET) - Silicon Junction Field-Effect Transistor

NJ450, Silicon Junction Field-Effect Transistor

F-36 01/99 NJ450 Process Silicon Junction Field-Effect Transistor LOW R(on) Switch Low-Noise, High Gain Amplifier Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C 65°C to +175°C S-D G Devices in this Databook based on the NJ450 Process.

Datasheet 2SK363 IFN146, IFN147 IFN363 J108, J109 J110, J110A G Die Size = 0.028" X 0.028" All Bond Pads = 0.004" Sq.

Substrate is also Gate.

S-D www.Data