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F-36
01/99
NJ450 Process
Silicon Junction Field-Effect Transistor
¥ LOW R(on) Switch ¥ Low-Noise, High Gain Amplifier
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C
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G
Devices in this Databook based on the NJ450 Process. Datasheet
2SK363 IFN146, IFN147 IFN363 J108, J109 J110, J110A
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Die Size = 0.028" X 0.028" All Bond Pads = 0.004" Sq. Substrate is also Gate.
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NJ450 Datasheet
