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2N6845 - POWER MOSFET

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Features

  • s s s s s Avalanche Energy Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Absolute Maximum Ratings Parameter I D @ VGS = -10V, TC = 25°C ID @ VGS = -10V, TC = 100°C IDM PD @ TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Œ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Ž Operating Junction Storage Temperature Range Lead Temperature Weight JANTX2N6.

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Full PDF Text Transcription

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Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.552B HEXFET ® JANTX2N6845 POWER MOSFET JANTXV2N6845 [REF:MIL-PRF-19500/563] [GENERIC:IRFF9120] P-CHANNEL Product Summary Part Number JANTX2N6845 JANTXV2N6845 BVDSS -100V RDS(on) 0.60Ω ID -4.0A -100 Volt, 0.60Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low onstate resistance combined with high transconductance. HEXFET transistors also feature all of the well-establish advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability.
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