Datasheet4U Logo Datasheet4U.com

2N6804 - TRANSISTORS

Datasheet Summary

Features

  • n n n n n Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requirements Ease of Paralleling Absolute Maximum Ratings Parameter ID @ VGS = 0V, TC = 25°C ID @ VGS = 0V, TC = 100°C I DM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode.

📥 Download Datasheet

Datasheet preview – 2N6804

📁 Similar Datasheet

  • 2N6804 - P-CHANNEL MOSFET (Microsemi)
  • 2N6800 - N-CHANNEL POWER MOSFET (Seme LAB)
  • 2N6800 - N-CHANNEL MOSFET (Microsemi)
  • 2N6802 - N-CHANNEL MOSFET (Microsemi)
  • 2N6802 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET (Seme LAB)
  • 2N681 - Thyristors (RCA)
  • 2N681 - silicon controlled rectifiers (Motorola)
  • 2N681 - SILICON CONTROLLED RECTIFIER (Digitron Semiconductors)
  • 2N681 - SILICON CONTROLLED RECTIFIER (Central Semiconductor)
  • 2N681A - SILICON CONTROLLED RECTIFIER (Central Semiconductor)
Other Datasheets by International Rectifier
  • 2N681 - 25 and 35 Amp RMS SCRs
  • 2N682 - 25 and 35 Amp RMS SCRs
  • 2N683 - 25 and 35 Amp RMS SCRs
  • 2N6845 - POWER MOSFET
  • 2N685 - 25 and 35 Amp RMS SCRs
  • 2N686 - 25 AND 35 AMP RMS SCR
  • 2N687 - 25 and 35 Amp RMS SCRs
  • 2N688 - 25 and 35 Amp RMS SCRs

Full PDF Text Transcription

Click to expand full text
PD - 90549C IRF9130 REPETITIVE A V ALANCHE AND dv/dt RATED JANTX2N6804  HEXFET TRANSISTORS JANTXV2N6804 THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/562] 100V, P-CHANNEL Product Summary Part Number IRF9130 BVDSS -100V RDS(on) 0.30 Ω ID -11A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of parelleling and temperature stability of the electrical parameters.
Published: |