* n n n n n n n n n n 5V CMOS and TTL Compatible Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface Mount Light Weight Absolute Maximum Ratings Parameter ID @VGS = 4.5V,TC = 25°C ID @VGS =
2N7609U8 Datasheet (196.20 KB)
2N7609U8
International Rectifier
196.20 KB
Power mosfet.
PD-97326A
RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-0.2)
Product Summary
Part Number IRHLNM77110 IRHLNM73110 Radiation Level 100.
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DURA7L
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TECHNOLOGY
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(International Rectifier)
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2N7635-GA - Junction Transistor
(GeneSiC)
2N7635-GA
Normally – OFF Silicon Carbide Junction Transistor
Features
225°C maximum operating temperature Electrically Isolated Base Plate Gate.
