2N7612M1 Datasheet - International Rectifier

2N7612M1 Power MOSFET

PD-97178 RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (MO-036AB) Product Summary Part Number Radiation Level RDS(on) IRHLG77110 100K Rads (Si) 0.22Ω IRHLG73110 300K Rads (Si) 0.22Ω ID 1.8A 1.8A 2N7612M1 IRHLG77110 100V, Quad N-CHANNEL TECHNOLOGY MO-036AB International Rectifier’s R7TM Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage remains within acceptab.

2N7612M1 Features

* n n n n n n n n 5V CMOS and TTL Compatible Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 4.5V, TC=25°C ID @ VGS = 4.5V, TC=100°C IDM PD @ TC = 25°

2N7612M1 Datasheet (232.74 KB)