* n n n n n n n n 5V CMOS and TTL Compatible Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 4.5V, TC=25°C ID @ VGS = 4.5V, TC=100°C IDM PD @ TC = 25°
2N7612M1 Datasheet (232.74 KB)
2N7612M1
International Rectifier
232.74 KB
Power mosfet.
PD-97178
RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (MO-036AB)
Product Summary
Part Number Radiation Level RDS(on) IRHLG77110 100K Rads (S.
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PD-97339
RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (MO-036AB)
Product Summary
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(International Rectifier)
RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (LCC-6)
PD-97573D
IRHLUC770Z4 2N7617UC
60V,
DURA7L
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TECHNOLOGY
Product Summary.
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(International Rectifier)
RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-2)
Product Summary Part Number Radiation Level
IRHLNA77064 100 kRads(Si) IRHLNA73064 3.
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(International Rectifier)
PD-97326A
RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-0.2)
Product Summary
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2N7621T2 - N-CHANNEL POWER MOSFET
(International Rectifier)
PD-94695H
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LM43602 - Power MOSFET
(International Rectifier)
PD-97574
2N7627UC IRHLUC7970Z4 RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (LCC-6)
Product Summary
Part Number Radiation Level RDS(on) .
2N7632UC - Power MOSFET
(International Rectifier)
PD-97268A
2N7632UC IRHLUC7670Z4 RADIATION HARDENED 60V, Combination 1N-1P-CHANNEL LOGIC LEVEL POWER MOSFET TECHNOLOGY SURFACE MOUNT (LCC-6)
Product.
2N7635-GA - Junction Transistor
(GeneSiC)
2N7635-GA
Normally – OFF Silicon Carbide Junction Transistor
Features
225°C maximum operating temperature Electrically Isolated Base Plate Gate.
