2N7614M1 Datasheet - International Rectifier

2N7614M1 Power MOSFET

PD-97339 RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (MO-036AB) Product Summary Part Number Radiation Level RDS(on) IRHLG77214 100K Rads (Si) 1.1Ω IRHLG73214 300K Rads (Si) 1.1Ω ID 0.8A 0.8A 2N7614M1 IRHLG77214 250V, Quad N-CHANNEL TECHNOLOGY International Rectifier’s R7TM Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments.The threshold voltage remains within acceptable operating.

2N7614M1 Features

* n n n n n n n n 5V CMOS and TTL Compatible Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 4.5V, TC= 25°C ID @ VGS = 4.5V, TC= 100°C IDM PD @ TC = 2

2N7614M1 Datasheet (225.35 KB)