* n n n n n n n n 5V CMOS and TTL Compatible Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 4.5V, TC= 25°C ID @ VGS = 4.5V, TC= 100°C IDM PD @ TC = 2
2N7614M1 Datasheet (225.35 KB)
2N7614M1
International Rectifier
225.35 KB
Power mosfet.
PD-97339
RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (MO-036AB)
Product Summary
Part Number Radiation Level RDS(on) IRHLG77214 100K Rads (S.
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RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-2)
Product Summary Part Number Radiation Level
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(International Rectifier)
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2N7635-GA - Junction Transistor
(GeneSiC)
2N7635-GA
Normally – OFF Silicon Carbide Junction Transistor
Features
225°C maximum operating temperature Electrically Isolated Base Plate Gate.
