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AUIRF7309Q Datasheet - International Rectifier

AUIRF7309Q Power MOSFET

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are wel.

AUIRF7309Q Features

* l l l l l l l l AUIRF7309Q HEXFET® Power MOSFET S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 2 3 4 7 6 5 Advanced Planar Technology Low On-Resistance Dual N and P Channel MOSFET Dynamic dV/dT Rating 150°C Operating Temperature Fast Switching Lead-Free, RoHS Compliant Automotive Qualified

* D1 D1 D2 D2 N-

AUIRF7309Q Datasheet (328.27 KB)