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AUIRF7313Q Power MOSFET

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Description

PD - 97751 AUTOMOTIVE GRADE AUIRF7313Q HEXFET® Power MOSFET 8 7 .
Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve.

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Features

* l l l l l l l l Advanced Planar Technology Dual N Channel MOSFET Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Lead-Free, RoHS Compliant Automotive Qualified
* S1 G1 S2 G2 1 2 D1 D1 D2 D2 3 4 6 5 Top View V(BR)DSS RDS(on) typ. max. ID 30V 23mΩ 29mΩ 6.9

Applications

* this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extreme

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