AUIRF7732S2TR1, AUIRF7732S2TR Datasheet (International Rectifier)

AUIRF7732S2TR1, AUIRF7732S2TR, Power MOSFET

The AUIRF7732S2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET ® packaging to achieve low gate charge as well as the lowest on-state resistance in a package that has the footprint which is 38% smaller than an SO-8 and only 0.7mm profile.

The Direct

AUIRF7732S2PbF AUIRF7732S2TR/TR1 Advanced Process Technology Optimized for Automotive DC-DC, Motor Drive and other Heavy Load Applications Exceptionally Small Footprint and Low Profile High Power Density Low Parasitic Parameters Dual Sided Cooling 175°C Operating Temperature Repetitive Avalanche Capability for Robustness and Reliability Lead free, RoHS and Halogen free D G DirectFET® Power MOSFET V(BR)DS

AUIRF7732S2TR1 Features

* of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current automotive applications. Ordering Information Base Part Number AUIRF7732S2 AUIRF7732S2 Pack