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AUIRF7736M2TR Datasheet - Infineon

AUIRF7736M2TR Power MOSFET

The AUIRF7736M2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging technology to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.7mm profile. The DirectFET® package is compatible with e.

AUTOMOTIVE GRADE AUIRF7736M2TR Advanced Process Technology Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications Exceptionally Small Footprint and Low Profile High Power Density Low Parasitic Parameters Dual Sided Cooling 175°C Operating Temperature Repetitive Avalanche Capability for Robustness and Reliability Lead free, RoHS and Halogen free  Automotive Qualified Automotive DirectFET® Power MOSFET .

AUIRF7736M2TR Features

* of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current automotive applications Base Part Number Package Type Standard Pack Form Quantity

AUIRF7736M2TR Datasheet (419.58 KB)