AUIRFI3205 Datasheet, Mosfet, International Rectifier

✔ AUIRFI3205 Features

Advanced Planar Technology Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Distance = 4.8mm 175°C Operating

this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-r

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AUIRFI3205

International Rectifier

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Power mosfet. Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techn

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Stock and price

International Rectifier

HEXFET POWER MOSFET Power Field-Effect Transistor, 64A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

ComSIT USA

AUIRFI3205

500 In Stock

Unit Price : $0

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AUIRFI3205 Power MOSFET International Rectifier