AUIRFIZ34N Datasheet - International Rectifier

AUIRFIZ34N Power MOSFET

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are wel.

AUIRFIZ34N Features

* l l l l l l l l l Advanced Planar Technology Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Distantce = 4.8mm 175°C Operating Temperature Fully Avalanche Rated Lead-Free, RoHS Compliant Automotive Qualified

* HEXFET® Power MOSFET V(BR)DSS RDS(on) ma

AUIRFIZ34N_InternationalRectifier.pdf