Datasheet Details
- Part number
- AUIRFIZ34N
- Manufacturer
- International Rectifier
- File Size
- 294.95 KB
- Datasheet
- AUIRFIZ34N_InternationalRectifier.pdf
- Description
- Power MOSFET
AUIRFIZ34N Description
AUTOMOTIVE GRADE PD - 97778 AUIRFIZ34N .AUIRFIZ34N Features
* l l l l l l l l l Advanced Planar Technology Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Distantce = 4.8mm 175°C Operating Temperature Fully Avalanche Rated Lead-Free, RoHS Compliant Automotive QualifiedAUIRFIZ34N Applications
* this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extreme
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