Datasheet Specifications
- Part number
- AUIRFIZ34N
- Manufacturer
- International Rectifier
- File Size
- 294.95 KB
- Datasheet
- AUIRFIZ34N_InternationalRectifier.pdf
- Description
- Power MOSFET
Description
AUTOMOTIVE GRADE PD - 97778 AUIRFIZ34N .
Features
* l l l l l l l l l Advanced Planar Technology Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Distantce = 4.8mm 175°C Operating Temperature Fully Avalanche Rated Lead-Free, RoHS Compliant Automotive QualifiedApplications
* this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremeAUIRFIZ34N Distributors
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