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AUIRFI4905 Power MOSFET

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Description

  AUTOMOTIVE GRADE AUIRFI4905 HEXFET® Power MOSFET D .
Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve.

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Features

*  Advanced Planar Technology
*  P-Channel MOSFET
*  Low On-Resistance
*  Dynamic dV/dT Rating
*  175°C Operating Temperature
*  Fast Switching
*  Fully Avalanche Rated
*  Repetitive Avalanche Allowed up to Tjmax
*  Lead-Free, RoHS Compliant
*  Automotive Qual

Applications

* this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed an ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremel

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