AUIRLR014N - HEXFET Power MOSFET
Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.
This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are wel
AUIRLR014N Features
* g TJ , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms 10 V QGS VG QG QGD Charge Fig 13a. Basic Gate Charge Waveform www.irf.com Current Regulator Same Type as D.U.T. 50K 12V .2F .3F D.U.T. + -VDS VGS 3mA I
