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AUIRLR024N Power MOSFET

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Description

PD- 96348 AUTOMOTIVE GRADE .
Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve.

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Features

* l l l l l l l l l l AUIRLR024N AUIRLU024N HEXFET® Power MOSFET D Advanced Planar Technology Low On-Resistance Logic-Level Gate Drive Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Q

Applications

* this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low onresistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremel

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