AUIRLR024N

Power MOSFET

International Rectifier

AUIRLR024N Features

* l l l l l l l l l l AUIRLR024N AUIRLU024N HEXFET® Power MOSFET D Advanced Planar Technology Low On-Resistance Logic-Level Gate Drive Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Q

AUIRLR024N General Description

Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low onresistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well.

AUIRLR024N Datasheet (338.93 KB)

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Datasheet Details

Part number:

AUIRLR024N

Manufacturer:

International Rectifier

File Size:

338.93 KB

Description:

Power mosfet.

📁 Related Datasheet

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AUTOMOTIVE GRADE Features  Advanced Planar Technology  Logic Level Gate Drive  Low On-Resistance  Dynamic dV/dT Rating  175°C Operating Temper.

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AUTOMOTIVEGRADE PD - 97740 • Advanced Planar Technology • Logic-Level Gate Drive • Low On-Resistance • Dynamic dV/dT Rating • 175°C Operating Temper.

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AUTOMOTIVE GRADE Features  Advanced Planar Technology  Logic Level Gate Drive  Low On-Resistance  Dynamic dV/dT Rating  175°C Operating Temper.

AUIRLR120N - Power MOSFET (International Rectifier)
PD - 97624 AUTOMOTIVE GRADE AUIRLR120N HEXFET® Power MOSFET D • • • • • • • • • • Advanced Planar Technology Logic-Level Gate Drive Low On-Resistan.

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AUIRLR024N Power MOSFET International Rectifier

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AUIRLR024N Features

AUIRLR024N General Description

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