AUIRLR2905 Datasheet, Mosfet, International Rectifier

AUIRLR2905 Features

• Mosfet VGS = 0V A 0.8 1.2 1.6 2.0 2.4 VSD , Source-to-Drain Voltage (V) 100 10μs 100μs 10 1ms TC = 25°C STJing=le 175°C Pulse 1 10ms A 1 10 100 VDS , Drain-to-Source Voltage (V) Fig

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AUIRLR2905

Manufacturer:

International Rectifier

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📄 Datasheet

Description:

Hexfet power mosfet. Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techn

AUIRLR2905 Application

• Applications this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

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AUIRLR2905

International Rectifier

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