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AUIRLR2905 HEXFET Power MOSFET

AUIRLR2905 Description

AUTOMOTIVE GRADE AUIRLR2905 AUIRLU2905 * Advanced Planar Technology * Logic-Level Gate Drive * Low On-Resistance * D.
Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve.

AUIRLR2905 Features

* J , Junction Temperature (°C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms 10 V QGS VG QG QGD Charge Current Regulator Same Type as D. U. T. 50K 12V .2F .3F D. U. T. + -VDS VGS 3mA IG ID Current Sampling Resistors Fig 13a. Basic Gate

AUIRLR2905 Applications

* this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extreme

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