F630NS Datasheet (International Rectifier)

F630NS, IRF630NS

l l HEXFET® Power MOSFET D VDSS = 200V RDS(on) = 0.30Ω G S Fifth Generation HEXFET ® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized devi

F630NS Features

* 4 9 ) 3 .54 (.13 9 ) -A 6.4 7 (.255 ) 6.1 0 (.240 ) -B4 .69 (.1 85 ) 4 .20 (.1 65 ) 1 .3 2 (.05 2 ) 1 .2 2 (.04 8 ) 4 15 .24 (.6 00 ) 14 .84 (.5 84 ) 1.1 5 (.0 45) M IN 1 2 3 L E A D A S S IG N M E NT S 1 - G A TE 2 - D R A IN 3 - SOURCE 4 - D R A IN 14 .09 (.5 55 ) 13 .47 (.5 30 ) 4 .0 6 (.16