F630 - 9A 200V N-channel Enhancement Mode Power MOSFET

The F630 by ROUM is a 9A 200V N-channel Enhancement Mode Power MOSFET. Below is the official datasheet preview.

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F630 9A 200V N-channel Enhancement Mode Power MOSFET by ROUM - Datasheet Preview — Official preview page of the **F630** 9A 200V N-channel Enhancement Mode Power MOSFET datasheet (ROUM).

Datasheet Details

Part number	F630
Manufacturer	ROUM
File Size	1.32 MB
Description	9A 200V N-channel Enhancement Mode Power MOSFET
Datasheet	F630-ROUM.pdf
Additional preview pages of the F630 datasheet.

F630 Product details

Description

These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Features

Fast Switching.
Low ON Resistance(Rdson≤0.4Ω).
Low Gate Charge(Typical Data:22nC).
Low Reverse Transfer Capacitances(Typical:22pF).
100% Single Pulse Avalanche Energy Test.
100% ΔVDS Test 3.

📁 F630 Similar Datasheet

F630N - N-Channel 200V MOSFET (VBsemi)
F630NS - IRF630NS (International Rectifier)
F634 - Power MOSFET (VBsemi)

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Published: Jan 17, 2019 |