F630
Description
These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
Key Features
- Fast Switching
- Low ON Resistance(Rdson≤0.4Ω)
- Low Gate Charge(Typical Data:22nC)
- Low Reverse Transfer Capacitances(Typical:22pF)
- 100% Single Pulse Avalanche Energy Test
- 100% ΔVDS Test
Applications
- High efficiency switch mode power supplies
