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F9Z24N IRF9Z24N

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Description

PD -9.1484B www.DataSheet4U.com IRF9Z24N VDSS = -55V RDS(on) = 0.175Ω HEXFET® Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C .
l l D G ID = -12A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resis.

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Features

* 2 5 5 ) 6 . 1 0 (. 2 4 0 ) -B 4 . 6 9 ( .1 8 5 ) 4 . 2 0 ( .1 6 5 ) 1 .3 2 (. 0 5 2 ) 1 .2 2 (. 0 4 8 ) 4 1 5 . 2 4 ( .6 0 0 ) 1 4 . 8 4 ( .5 8 4 ) 1 . 1 5 ( .0 4 5 ) M IN 1 2 3 L E A D A S S IG N M E N T S 1 - G A TE 2 - D R AIN 3 - SO URCE 4 - D R AIN 1 4 . 0 9 (.5 5 5 ) 1 3 . 4 7 (.5 3 0 )

Applications

* The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. TO-220AB Absolute Maximum Ratings

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