F9Z34NS - IRF9Z34NS
l l D VDSS = -55V RDS(on) = 0.10Ω G ID = -19A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Pow
F9Z34NS Features
* www.DataSheet4U.com 10.54 ( .415) 10.29 ( .405) 1.40 (.055) MAX. -A2 4.69 (.185) 4.20 (.165) -B 1.32 (.052) 1.22 (.048) 10.16 (.400) RE F . 6.47 (.255) 6.18 (.243) 15.49 (.610) 14.73 (.580) 5.28 (.208) 4.78 (.188) 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 8.89 (.350) RE F. 1.78 (.070)
