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F9Z34NL

IRF9Z34NL

F9Z34NL Features

* tline 10.54 ( .415) 10.29 ( .405) 1.40 (.055) MAX. -A2 4.69 (.185) 4.20 (.165) -B 1.32 (.052) 1.22 (.048) 10.16 (.400) RE F . 6.47 (.255) 6.18 (.243) 15.49 (.610) 14.73 (.580) 5.28 (.208) 4.78 (.188) 1.39 (.055) 1.14 (.045) 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 8.89 (.350) RE F. 1.78

F9Z34NL General Description

l l D VDSS = -55V RDS(on) = 0.10Ω G ID = -19A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This www.DataSheet4U.com benefit, combined with the fast switching speed and ruggedized device de.

F9Z34NL Datasheet (178.38 KB)

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Datasheet Details

Part number:

F9Z34NL

Manufacturer:

International Rectifier

File Size:

178.38 KB

Description:

irf9z34nl.
PD - 9.1525 IRF9Z34NS/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF9Z34NS) l Low-profile through-hole (IRF9Z34NL) l 175°C Ope.

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