HFB16HY20C Datasheet, Diode, International Rectifier

HFB16HY20C Features

• Diode • • • • • Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Ceramic Eyelets Ultrafast, Soft Recovery Diode V4 = 200V I.)8 = 16A tHH = 35

PDF File Details

Part number:

HFB16HY20C

Manufacturer:

International Rectifier

File Size:

234.41kb

Download:

📄 Datasheet

Description:

Soft recovery diode. These Ultrafast, soft reovery diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An exte

HFB16HY20C Application

• Applications These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant por

TAGS

📁 Related Datasheet

HFB16HY20CC - Soft Recovery Diode (International Rectifier)
PD - 94223B HFB16HY20CC FRED Features • • • • • Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Ceram.

HFB16PA60C - Ultrafast/ Soft Recovery Diode (International Rectifier)
Bulletin PD-2.606 rev. B 05/01 HFA16PA60C HEXFRED Features • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Op.

HFB12PA120C - Soft Recovery Diode (International Rectifier)
PD -2.362 rev. C 01/2000 HFA12PA120C HEXFRED .. TM Ultrafast, Soft Recovery Diode Features • Ultrafast Recovery • Ultrasoft Recove.

HFB1N60 - N-Channel MOSFET (SemiHow)
HFB1N60 Nov 2007 HFB1N60 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ  ȍ ID = 0.4 A FEATURES ‰ Originative New Design ‰ Superior Avalanche.

HFB1N60S - N-Channel MOSFET (SemiHow)
HFB1N60S Sep 2009 HFB1N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 0.3 A FEATURES ‰ Originative New Design ‰ Superior Avalanch.

HFB1N65S - N-Channel MOSFET (SemiHow)
HFB1N65S Dec 2012 HFB1N65S 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ ȍ ID = 0.3 A FEATURES ‰ Originative New Design ‰ Superior Avalan.

HFB1N70 - N-Channel MOSFET (SemiHow)
HFB1N70 Jan 2007 HFB1N70 700V N-Channel MOSFET BVDSS = 700 V RDS(on) typ = 10.3 Ω ID = 0.3 A FEATURES ‰ Originative New Design ‰ Superior Avalanch.

HFB1N70S - N-Channel MOSFET (SemiHow)
HFB1N70S Dec 2012 HFB1N70S 700V N-Channel MOSFET BVDSS = 700 V RDS(on) typ ȍ ID = 0.3 A FEATURES ‰ Originative New Design ‰ Superior Avalan.

HFB03 - High Frequency Ferrite Beads (Allied Components International)
RoHS HFB03 & 05 Dimensions: HFB03 0.039±0.006 (0.99±0.15) 0.020±0.006 (0.51±0.15) 0.020±0.006 (0.51±0.15) High Frequency Ferrite Beads Inches (mm) H.

HFB05 - High Frequency Ferrite Beads (Allied Components International)
RoHS HFB03 & 05 Dimensions: HFB03 0.039±0.006 (0.99±0.15) 0.020±0.006 (0.51±0.15) 0.020±0.006 (0.51±0.15) High Frequency Ferrite Beads Inches (mm) H.