HFB1N65S Datasheet - SemiHow

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HFB1N65S N-Channel MOSFET

HFB1N65S Dec 2012 HFB1N65S 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ ȍ ID = 0.3 A .

HFB1N65S-SemiHow.pdf

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Datasheet Details

Part number:

HFB1N65S

Manufacturer:

SemiHow

File Size:

241.86 KB

Description:

N-Channel MOSFET

Features

* Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 3.0 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tes

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