HFB1N70 - N-Channel MOSFET

Product Overview

SemiHow

Part number	HFB1N70
Manufacturer	SemiHow
File Size	296.50 KB
Description	N-Channel MOSFET
Datasheet	HFB1N70 Datasheet
Additional preview pages of the HFB1N70 datasheet.

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 4.5 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 10.3 Ω (Typ. ) @VGS=10V 100% Avalanche Tested TO-92 1 23 1.Gate 2. Drain 3. Source D G S Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Cu.

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Published: Jun 7, 2015 |