IP2010PBF Datasheet - International Rectifier

IP2010PBF, High Frequency GaN-Based Integrated Power Stage

www.DataSheet4U.com PD-97461 iP2010PbF GaNpowIRTM .
The iP2010 is a fully optimized, high frequency power stage solution for synchronous buck applications utilizing IR’s Gallium Nitride (GaN)based power.

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IP2010PBF_InternationalRectifier.pdf

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Datasheet Details

Part number:

IP2010PBF

Manufacturer:

International Rectifier

File Size:

62.40 KB

Description:

High Frequency GaN-Based Integrated Power Stage

Features

* Input voltage range of 7V to 13.2V Output voltage range of 0.6V to 5.5V Output current up to 30A Benchmark peak and full load efficiency
* no heat sink required Operation up to 3MHz Ultrafast,

Applications

* utilizing IR’s Gallium Nitride (GaN)based power device technology platform. The iP2010 integrates a highly sophisticated, ultra fast PowIRtune driver IC matched to a multi-switch monolithic GaN-based power device. These devices are mounted in a completely wireless package platform to deliver higher

IP2010PBF Distributors

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IP2010PBF High Frequency GaN-Based Integrated Power Stage International Rectifier

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