IRF1503
Features
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- RDS(on) = 3.3mΩ ID = 75A
Description
Specifically designed for Automotive applications, this design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These bine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
TO-220AB
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS EAS EAS (tested) IAR EAR TJ TSTG Continuous Drain Current, VGS @ 10V (Silicon limited) Continuous Drain Current, VGS @ 10V (See Fig.9) Continuous Drain Current, VGS @ 10V (Package limited) Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Single Pulse Avalanche...
