Datasheet4U Logo Datasheet4U.com

IRF1503LPBF - Power MOSFET

General Description

This Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRF1503 N-Channel MOSFET INCHANGE
IRF1503S N-Channel MOSFET INCHANGE
IRF150 N-CHANNEL POWER MOSFET Seme LAB
IRF150 N-Channel Power MOSFET Intersil Corporation
IRF150 N-Channel Power MOSFET Fairchild Semiconductor

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF1503 AUTOMOTIVE MOSFET
IRF1503PBF Power MOSFET
IRF1503SPBF Power MOSFET
IRF150 N-Channel Power MOSFET
IRF1520G Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD - 95432A Typical Applications l Industrial Motor Drive IRF1503SPbF IRF1503LPbF HEXFET® Power MOSFET D Benefits l l l l l VDSS = 30V RDS(on) = 3.3mΩ Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax G S ID = 75A Description This Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.