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IRF1503 - AUTOMOTIVE MOSFET

General Description

Specifically designed for Automotive applications, this design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low onresistance per silicon area.

Key Features

  • RDS(on) = 3.3mΩ ID = 75A.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD-94526A AUTOMOTIVE MOSFET Typical Applications ● ● IRF1503 D HEXFET® Power MOSFET VDSS = 30V G S 14V Automotive Electrical Systems 14V Electronic Power Steering Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Features ● ● ● ● ● RDS(on) = 3.3mΩ ID = 75A Description Specifically designed for Automotive applications, this design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.