IRF1503PBF
Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature
G l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
HEXFET® Power MOSFET
VDSS = 30V
RDS(on) = 3.3mΩ
ID = 75A
Description
This design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These bine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Absolute Maximum Ratings
ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C
VGS EAS EAS (tested) IAR EAR TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V (Silicon limited) Continuous Drain Current, VGS @ 10V (See Fig.9) Continuous Drain Current, VGS @ 10V (Package limited) Pulsed Drain Current Power Dissipation Linear Derating...
