IRF3707ZS Datasheet - International Rectifier

IRF3707ZS Power MOSFET

Applications l High Frequency Synchronous Buck Converters for Computer Processor Power HEXFET® Power MOSFET IRF3707Z IRF3707ZS IRF3707ZL Qg 9.7nC PD - 95812A VDSS RDS(on) max 30V 9.5m: Benefits l Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current TO-220AB IRF3707Z D2Pak IRF3707ZS TO-262 IRF3707ZL Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ TSTG Drain-to-Source Voltage Ga.

IRF3707ZS Features

* f ⎞ ⎝ 2 ⎠ ⎞ f⎟ ⎠ This simplified loss equation includes the terms Qgs2 and Qoss which are new to Power MOSFET data sheets. Qgs2 is a sub element of traditional gate-source charge that is included in all MOSFET data sheets. The importance of splitting this gate-source charge into two sub elements,

IRF3707ZS Datasheet (506.20 KB)