IRF3710 Datasheet - International Rectifier

Power MOSFET

IRF3710 General Description

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the des.

IRF3710 Datasheet (218.87 KB)

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IRF3710

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International Rectifier

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218.87 KB

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Power mosfet.
PD - 94954D l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Ava.

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IRF3710 Power MOSFET International Rectifier

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IRF3710 General Description

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