IRF3711ZPbF Datasheet - International Rectifier

IRF3711ZPbF Power MOSFET

Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l Lead-Free PD - 95530 IRF3711ZPbF IRF3711ZSPbF IRF3711ZLPbF HEXFET® Power MOSFET VDSS RDS(on) max Qg 20V 6.0m: 16nC Benefits l Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C Gate-to-Source Voltage Continuous Drain Curre.

IRF3711ZPbF Features

* oss 2 × Vin × f ⎞ ⎠ This simplified loss equation includes the terms Qgs2 and Qoss which are new to Power MOSFET data sheets. Qgs2 is a sub element of traditional gate-source charge that is included in all MOSFET data sheets. The importance of splitting this gate-source charge into two sub elem

IRF3711ZPbF Datasheet (354.78 KB)