Datasheet4U Logo Datasheet4U.com

IRF3710Z - N-Channel MOSFET

IRF3710Z Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF3710Z，IIRF3710Z *.

IRF3710Z Features

* Static drain-source on-resistance: RDS(on) ≤18mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

IRF3710Z Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 59 IDM Drain Current-Single Pulsed 240 PD Total Dissipation @TC=25℃ 160 Tj Max. Operating Junction Temperature 175 Tstg Storage T

📥 Download Datasheet

Preview of IRF3710Z PDF
datasheet Preview Page 2

Datasheet Details

Part number
IRF3710Z
Manufacturer
INCHANGE
File Size
242.31 KB
Datasheet
IRF3710Z-INCHANGE.pdf
Description
N-Channel MOSFET

📁 Related Datasheet

  • IRF3710ZGPbF - Power MOSFET (International Rectifier)
  • IRF3710ZL - HEXFET Power MOSFET (International Rectifier)
  • IRF3710ZLPbF - HEXFET Power MOSFET (International Rectifier)
  • IRF3710ZPbF - HEXFET Power MOSFET (International Rectifier)
  • IRF3710ZS - HEXFET Power MOSFET (International Rectifier)
  • IRF3710ZSPbF - HEXFET Power MOSFET (International Rectifier)
  • IRF3710 - N-Channel Power MOSFET (nELL)
  • IRF3710L - Power MOSFET (International Rectifier)

📌 All Tags

N-Channel MOSFET INCHANGE
INCHANGE IRF3710Z-like datasheet

IRF3710Z Stock/Price