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IRF4905LPBF HEXFET Power MOSFET

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Description

PD - 97034 IRF4905SPbF IRF4905LPbF .
Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .

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Applications

* D G D S G D S D2Pak IRF4905SPbF G D TO-262 IRF4905LPbF S Absolute Maximum Ratings Parameter Gate Drain Max. -70 -44 -42 -280 170 1.3 ± 20 Source Units A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limi

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