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IRF4905PbF Power MOSFET

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Description

Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Le.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

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Features

* 0AB. 2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information EXAMPLE: THIS IS AN IRF1010 LOT CODE 1789 ASSEMBLED O N WW 19, 1997 IN THE ASSEMBLY LINE "C" Note: "P" in assembly line position indicates "Lead-Free" INTERNATIO N AL RECTI

Applications

* The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings Parameter

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