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IRF520NS

Power MOSFET

IRF520NS Features

* 5) 8.8 9 (.3 50 ) R E F. 1.7 8 (.07 0) 1.2 7 (.05 0) 1 3 3X 1.40 (.0 55) 1.14 (.0 45) 5 .08 (.20 0) 0 .93 (.03 7 ) 3X 0 .69 (.02 7 ) 0 .25 (.01 0 ) M B A M 0.5 5 (.022 ) 0.4 6 (.018 ) M IN IM U M R E CO M M E ND E D F O O TP R IN T 1 1.43 (.4 50 ) NO TE S: 1 D IM EN S IO N S A FTER SO L D E

IRF520NS General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer .

IRF520NS Datasheet (185.17 KB)

Preview of IRF520NS PDF

Datasheet Details

Part number:

IRF520NS

Manufacturer:

International Rectifier

File Size:

185.17 KB

Description:

Power mosfet.
PD -91340A IRF520NS/L HEXFET® Power MOSFET l l l l l l Advanced Process Technology Surface Mount (IRF520NS) Low-profile through-hole (IRF520NL) 175°.

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IRF520NS Power MOSFET International Rectifier

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